Single Crystal Growth of the High Pressure Phase of (VO)2P2O7 at 3 GPa

✍ Scribed by T. Saito; T. Terashima; M. Azuma; M. Takano; T. Goto; H. Ohta; W. Utsumi; P. Bordet; D.C. Johnston

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 273 KB
• Volume: 153
• Category: Article
• ISSN: 0022-4596
• DOI: 10.1006/jssc.2000.8761

✦ Synopsis

Single crystals of the high-pressure phase of (VO) 2 P 2 O 7 were grown by slowly cooling the melt at 3 GPa. Relevant reactions at high pressure and high temperature were studied in advance by in situ X-ray di4raction (XRD) measurements. The crystal structure of the high-pressure phase was determined by singlecrystal XRD. Magnetic susceptibility of the crystal was measured along the three principal axes and analyzed using a S ‫؍‬ 1 2 Heisenberg AF alternating-exchange chain model. A good 5t was obtained using the g values determined by ESR measurements, J 1 /k B ‫؍‬ 131.6(1) K, and an alternation parameter of ,J 2 /J 1 ‫؍‬ 0.8709(5). The spin gap was estimated to be /k B ‫؍‬ 33.4(2) K.