Single-crystal growth of Nd2−xCexCuO4 at low oxygen pressure in ambient atmosphere
✍ Scribed by K. Gamayunov; I. Tanaka; H. Kojima
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 325 KB
- Volume
- 228
- Category
- Article
- ISSN
- 0921-4534
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✦ Synopsis
Ndl.85Ceo.15CuO 4 single crystals of improved quality have been grown by the TSFZ method at an oxygen partial pressure i~1 ambient atmosphere of 0.2, 0.1, 0.08 and 0.01 atm. Superconductivity in the as-grown state has been observed in the crystals grown at 0.08 and 0.01 atm. The improvement of the Ce distribution has been achieved due to a decreased value of the Ce distribution coefficient at low oxygen partial pressure in ambient atmosphere. The probability to obtain the same characteristics of the superconducting transition in the as-gown state as that in the crystals after post-growth high-temperature treatment seems to be very low because of oxidation during the cooling of the grown crystal from the crystallization temperature to room temperature.
📜 SIMILAR VOLUMES
A strong dependence of the cerium distribution coefficient (Kc~) on oxygen partial pressure P[O2] has been shown in direct .lalm 0.2 arm TSFZ experiments by changing the oxygen pressure during Nd2\_xCe~CuO4 single crystal growth. The ratio of K°~ /Kc~ has been found to be equal to ~ 0.62. Absolute v