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Single Crystal Growth and Transport Properties of Cu-doped Topological Insulator Bi2Se3

✍ Scribed by Z.J. Li; Y. Liu; S.C. White; P. Wahl; X.M. Xie; M.H. Jiang; C.T. Lin

Book ID
119345684
Publisher
Elsevier
Year
2012
Tongue
English
Weight
864 KB
Volume
36
Category
Article
ISSN
1875-3892

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The single crystals of the ternary system based on Bi 2-x Tl x Se 3 (nominaly x = 0.0-0.1) were prepared using the Bridgman technique. Samples with varying content of Tl were characterized by the measurement of lattice parameters, electrical conductivity Οƒ βŠ₯c , Hall coefficient R H (B||c), and Seebe