β Scribed by Julien L. Colaux; Guy Terwagne
No coin nor oath required. For personal study only.
Nuclear reactions (d,p) are often used to perform depth profiling of light elements in solids. In particular, protons coming from 12 C(d,p 0 ) 13 C and 13 C(d,p 0 ) 14 C reactions are emitted at very different energies. Consequently these two reactions can be used to depth profile 12 C and 13 C simultaneously. Nevertheless the cross-section of 13 C(d,p 0 ) 14 C reaction is 10 times smaller than the 12 C(d,p 0 ) 13 C one. So, the geometry of detection must be judiciously chosen in order to depth profile these two elements with a high sensitivity and good resolution.
In the framework of this study we have performed 400 keV 13 C ions implantation into polished copper substrates at different temperatures and implanted doses with a 2 MV Tandem accelerator. Using the reactions described above, we have studied the evolution of 13 C depth profile as a function of implanted doses and temperature. We have also determined the origin of surface contamination that appears during the implantation process.
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