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Simulation of the development of branching streamer structures in dielectric liquids with pulsed conductivity of channels

✍ Scribed by A. L. Kupershtokh; D. I. Karpov

Book ID
111449414
Publisher
SP MAIK Nauka/Interperiodica
Year
2006
Tongue
English
Weight
218 KB
Volume
32
Category
Article
ISSN
1063-7850

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## Abstract The degradation produced by channel hot‐carrier (CHC) on short channel transistors with high‐k dielectric has been analyzed. For short channel transistors (__L__<0.15 ¡m), the most damaging stress condition has been found to be __V__~G~=__V__~D~ instead of the β€˜classical’ __V__~G~=__V__