Simulation of Si n-MOS inversion layer with Schrödinger-Poisson equivalent circuit model
✍ Scribed by Szu-Ju Li; Chia-Cherng Chang; Yao-Tsung Tsai
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 168 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0894-3370
- DOI
- 10.1002/jnm.600
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✦ Synopsis
In this paper, a simplified method for solving the Schro¨dinger-Poisson equation set in a quantum mechanical (QM) simulation is presented. This method simplifies the conventional Schro¨dinger and Poisson equations and then converts the simplification equation into an equivalent circuit form. During the QM simulation, the equivalent circuit model can replace the Schro¨dinger and Poisson's equations. In the equivalent circuit, the node voltages are taken as wave functions, and the electron concentration in the MOS inversion layer can be easily presented by solving the Schro¨dinger-Poisson equivalent circuit model. The simulation results are presented to demonstrate the quantum effects in the MOS inversion layer.