The inΓuence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Γ 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.
Simulation of plasma disruption induced melting and vaporization by ion or electron beam
β Scribed by Ahmed M. Hassanein
- Publisher
- Elsevier Science
- Year
- 1984
- Tongue
- English
- Weight
- 411 KB
- Volume
- 123
- Category
- Article
- ISSN
- 0022-3115
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