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Simulation of Na, K, Cs and Cs(O) adsorption on GaAs(1 1 0) and (1 0 0) surfaces: towards predictable electronic structure of activation layer

✍ Scribed by S.E. Kulkova; D.V. Khanin; A.V. Subashiev

Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 262 KB
Volume: 536
Category: Article
ISSN: 0168-9002
DOI: 10.1016/j.nima.2004.08.087

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✦ Synopsis

Ab-initio full-potential linearized augmented-plane-wave method is used to elucidate interaction of the surface states of a GaAs substrate with different adsorbates. Simulation of the electronic structure of clean ideal and relaxed GaAs (1 0 0) and (1 1 0) surfaces as well as surfaces with thin overlayers of alkali metals was performed to obtain the coverage dependence of the work function. Results are found to be in satisfactory agreement with experimental data. The role of oxygen during cesium adsorption is also studied. The formation of activation layer and its electronic structure are discussed.

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Simulation of Na, K, Cs and Cs(O) adsorption on GaAs(1&#xa0;1&#xa0;0) and (1&#xa0;0&#xa0;0) surfaces: towards predictable electronic structure of activation layer

✦ Synopsis

Simulation of Na, K, Cs and Cs(O) adsorption on GaAs(1 1 0) and (1 0 0) surfaces: towards predictable electronic structure of activation layer