✦ LIBER ✦
Simulation of lateral Al recoil atoms and damage defects gradients in a GaAs/GaAlAs quantum well created by masked ion implantation
✍ Scribed by M.M. Faye; C. Vieu; L. Laânab; J. Beauvillain; A. Claverie
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 322 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0921-5107
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