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Simulation of deep defect filling in n-type Schottky barrier structures

✍ Scribed by R Brüggemann; H Cordes; K Lips


Book ID
117149009
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
105 KB
Volume
227-230
Category
Article
ISSN
0022-3093

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## Abstract Thermal annealing effects on the electrical and structural properties of Ni/Mo Schottky contacts on n‐type GaN have been investigated by current–voltage (__I–V__), capacitance–voltage (__C–V__), Secondary ion mass spectrometer (SIMS), and X‐ray diffraction (XRD) techniques. The extracte