Simulation of a high performance MOSFET with a quantum wire structure incorporating a periodically bent Si-SiO2 interface

✍ Scribed by Tanaka, J.; Sawada, A.

• Book ID: 114536647
• Publisher: IEEE
• Year: 1996
• Tongue: English
• Weight: 588 KB
• Volume: 43
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.544390