The electromagnetic and temperature fields in an inductively heated semiconductor interact with each other in a sophisticated way through the heat dependence of the material parameters and the heat source density determined by the eddy currents. The paper deals with a computer analysis of the intera
β¦ LIBER β¦
Simulation Analysis of the Temperature Field in an Induction Launcher
β Scribed by Li San-Qun, ; Guan Xiao Cun, ; Lei Bin, ; Li Zhi-Yuan,
- Book ID
- 121474841
- Publisher
- IEEE
- Year
- 2013
- Tongue
- English
- Weight
- 639 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0093-3813
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Computer simulation of the temperature a
β
GΓ‘bor Renner
π
Article
π
1978
π
Elsevier Science
π
English
β 761 KB
Simulation of temperature and flow field
β
M. H. Tavakoli; E. Mohammadi-Manesh; S. Omid
π
Article
π
2010
π
John Wiley and Sons
π
English
β 302 KB
π 2 views
## Abstract The goal of the research presented here is to apply a global analysis of an inductively heated Czochralski furnace for a real sapphire crystal growth system and predict the characteristics of the temperature and flow fields in the system. To do it, for the beginning stage of a sapphire
AN ANALYSIS OF THE COMPUTER MODELING OF
β
Mostaghimi, Javad; Proulx, Pierre; Boulos, Maher I.
π
Article
π
1985
π
Informa UK (Taylor & Francis)
π
English
β 396 KB
Time dependent simulation of the plasma
β
Mohanti, R.B.; Gilligan, J.G.
π
Article
π
1993
π
IEEE
π
English
β 599 KB
Simulation Analysis of Temperature Field
β
Di Zhang; Zhen Luo; Wenbo Xuan
π
Article
π
2012
π
Elsevier
π
English
β 373 KB
Flow and Temperature Fields in the Fireb
β
Boulos, M. I.
π
Article
π
1976
π
IEEE
π
English
β 120 KB