SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150 eV

✍ Scribed by M. Juhel; F. Laugier; D. Delille; C. Wyon; L.F.Tz. Kwakman; M. Hopstaken

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 246 KB
• Volume: 252
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2006.02.242