Simple design for cost-effective diversity antennas
✍ Scribed by N. Belmar-Moliner; A. Valero-Nogueira; M. Cabedo-Fabrés; E. Antonino-Daviu
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 169 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
This letter shows a simple design for a diversity planar monopole antenna with two feed points that can be used in multiple input multiple output (MIMO) systems. The design is based on the theory of characteristic modes. The final antenna has two highly isolated ports with an envelope correlation of less than 0.02 at the central frequency. This fact shows that the antenna meets the requirement for achieving diversity, and therefore, capacity. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 994–996, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22325
📜 SIMILAR VOLUMES
## Abstract A simple method for generating circular polarization (CP) radiation from an annular‐ring slot antenna is described in this paper.The slot antenna is excited by an L‐shaped coupling strip loaded with a resistor. The lengths of the two arms of the coupling strip are the same, and when the
## Abstract This paper considers the use of dual‐reflector antennas for omnidirectional coverage. The reflectors are axially symmetric surfaces generated by axis‐displaced conic sections. By using geometrical optics (GO) principles, simple design equations for the different configurations are estab
## Abstract A two‐element diversity planar antenna for a multiple‐input multiple‐output application is proposed. By adopting two Y‐shaped radiators, the antenna provides wideband impedance matching characteristics over the desired frequency band. To reduce the mutual coupling between two radiating
that problems due to deep traps have been dealt with in w x another paper 5 . A comparison with the silicon LDMOS shows that the silicon carbide impedances are greater than the silicon impedances, and it makes impedance matching easier for SiC. The forthcoming technological improvements Ž will allow