✦ LIBER ✦

Simple calculation of the Landau levels of narrow-gap semiconductors in the Kane model

✍ Scribed by S. Askenazy; P.R. Wallace; R.A. Stradling; J. Galibert; P. Perrier

Book ID: 107986723
Publisher: Elsevier Science
Year: 1984
Tongue: English
Weight: 145 KB
Volume: 106
Category: Article
ISSN: 0375-9601
DOI: 10.1016/0375-9601(84)90315-3

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Highg-factors and Landau level crossing

Highg-factors and Landau level crossing in the valence band of narrow gap semiconductors

✍ M. Singh; P.R. Wallace 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 330 KB

Calculation of the Auger lifetime of deg

Calculation of the Auger lifetime of degenerate carriers in the many-valley narrow gap semiconductors

✍ A.V. Dmitriev 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 302 KB

On the position of surface states in the

On the position of surface states in the energy gap of narrow gap semiconductors

✍ V Detcheva; B.D Kandilarov 📂 Article 📅 1977 🏛 Elsevier Science 🌐 English ⚖ 241 KB

Gap opening in the zeroth Landau level o

Gap opening in the zeroth Landau level of graphene

✍ Giesbers, A.; Ponomarenko, L.; Novoselov, K.; Geim, A.; Katsnelson, M.; Maan, J. 📂 Article 📅 2009 🏛 The American Physical Society 🌐 English ⚖ 267 KB

Features of interband absorption in the

Features of interband absorption in the dielectric function of narrow-gap semiconductors

✍ Falkovsky, L. A. 📂 Article 📅 2008 🏛 The American Physical Society 🌐 English ⚖ 162 KB

The dipole model of narrowing of the ene

The dipole model of narrowing of the energy gap between the Hubbard bands in slightly compensated semiconductors

✍ N. A. Poklonski; S. A. Vyrko; A. G. Zabrodskiĭ 📂 Article 📅 2006 🏛 Springer 🌐 English ⚖ 302 KB