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Simple Calculation of Pressure Dependent Electronic Properties of n-Inversion Layers in InSb Bicrystals

✍ Scribed by Th. Schurig; R. Herrmann

Publisher: John Wiley and Sons
Year: 1986
Tongue: English
Weight: 312 KB
Volume: 138
Category: Article
ISSN: 0370-1972
DOI: 10.1002/pssb.2221380251

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📜 SIMILAR VOLUMES

Some Properties of n-Inversion Layers at

Some Properties of n-Inversion Layers at Grain Boundaries in InSb Bicrystals

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Magnetotransport Properties and Subband

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Two-Dimensional Properties of n-Inversion Layers in InSb Grain Boundaries under High Hydrostatic Pressure

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## Abstract Magnetotransport properties of n‐inversion layers in grain boundaries of p‐InSb bicrystals are investigated under high hydrostatic pressure up to 10^3^ MPa. A rapid decrease of the carrier concentration in the inversion layer is observed when hydrostatic pressure is applied. A simple mo