Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750°C) epitaxial silicon deposition. I. Process considerations: James H Comfort et al, J appl Phys, 62, 1987, 3388–3397

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 155 KB
• Volume: 39
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/0042-207x(89)90476-4