Silicon oxide deposited by direct photolysis of N2O and SiH4 at 185 nm on sulfur-treated InP: application to InP MISFETs

✍ Scribed by N Proust; M Petitjean; C Arnodo; M Beguet; J.F Chapeaublanc; J Perrin

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 314 KB
• Volume: 24
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/0026-2692(93)90040-l