✦ LIBER ✦

Silicon on thin insulator: prediction of the oxygen fluence required for the formation of a continuous buried oxide

✍ Scribed by G.F. Cerofolini; S. Bertoni; L. Meda; C. Spaggiari

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 942 KB
Volume: 22
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(94)90241-0

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The electrochemical formation and remova

The electrochemical formation and removal of thin oxide films on noble metals: Survey of some recent work—Evidence for a model involving high-field ion transport

✍ M.J. Weaver 📂 Article 📅 1974 🏛 Elsevier Science ⚖ 900 KB

The electrochemical formation and reduction of oxygen films on noble metals, particularly platinum, have been the subject of numerous studies 1. However, much confusion has surrounded attempts to obtain a general understanding of the behaviour of these systems. This can ,perhaps be traced to rather

A compatible technique for the formation

A compatible technique for the formation of thin tantalum film resistors on silicon integrated circuits : M. J. Walker, IEEE Trans. Electron Devices, ED13, No. 5, May (1966), p. 472

📂 Article 📅 1967 🏛 Elsevier Science 🌐 English ⚖ 199 KB