✦ LIBER ✦
Significant operating voltage reduction on high-speed GaAs-based heterojunction bipolar transistors using a low band gap InGaAsN base layer
✍ Scribed by Monier, C.; Baca, A.G.; Ping-Chih Chang; Newman, F.D.; Li, N.Y.; Sun, S.Z.; Armour, E.; Hou, H.Q.
- Book ID
- 114616811
- Publisher
- IEEE
- Year
- 2002
- Tongue
- English
- Weight
- 412 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0018-9383
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