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Signal amplification by four-wave mixing in low-dispersion optical fibers

✍ Scribed by J. M. Chávez Boggio; D. F. Grosz; A. Guimarães; H. L. Fragnito

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
127 KB
Volume
23
Category
Article
ISSN
0895-2477

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✦ Synopsis

region, are affected by various scattering mechanisms, thereby decreasing the cutoff frequency.

Conclusions

An analytical model for a pseudomorphic modulation-doped transistor is presented to evaluate its cutoff frequency and capacitance᎐voltage characteristics. It is shown that an Al-GaAsrInGaAs MODFET has better charge control and high cutoff frequency than an AlGaAsrGaAs MODFET at all gate lengths, which helps explain the superior RF performance of the former. The superior performance of pseudomorphic MODFETs is also due to the excellent carrier confinement and transport properties that that InGaAs quantum well provides. The 0.25 m gate length MODFET reported a cutoff frequency of 94.8 GHz. The results, when compared with experimental data, show excellent agreement.

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