✦ LIBER ✦

Si(Ge)/oxide-based heterostructures and their applications to optoelectronics

✍ Scribed by S Fukatsu; Y Kishimoto; Y Ishikawa; N Shibata

Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 588 KB
Volume: 159-160
Category: Article
ISSN: 0169-4332
DOI: 10.1016/s0169-4332(00)00153-7

No coin nor oath required. For personal study only.

✦ Synopsis

Epitaxial Si Ge roxide semiconductorrwide-gap material systems have been developed as a new class of Si-based heterostructure. Optoelectronic device capabilities are highlighted, and also reported are preliminary results of the fabrication of SirSiO cavity resonance photodiodes and SiGe-based wavelength-selective ''near-surface'' photodetectors in a 2 metal-semiconductor-metal configuration.

📜 SIMILAR VOLUMES

Electrical properties of ceria-based oxi

Electrical properties of ceria-based oxides and their application to solid oxide fuel cells

✍ K. Eguchi; T. Setoguchi; T. Inoue; H. Arai 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 481 KB

Ultra-thin silicon-oxide films by sputte

Ultra-thin silicon-oxide films by sputter-deposition and their application to high-quality poly-Si TFTS

✍ T Serikawa; S Shirai 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 448 KB

This paper describes ultra-thin high-quality silicon oxide (SiO 2 ) films deposited at low temperature by sputtering from a SiO 2 target in an oxygen^argon mixture. SiO 2 films up to a thickness of 6.5 nm are successfully formed on polycrystalline silicon (poly-Si) films which have a surface roughne