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SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy

✍ Scribed by Y. Bogumilowicz; J.M. Hartmann; N. Cherkashin; A. Claverie; G. Rolland; T. Billon


Book ID
108215245
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
196 KB
Volume
124-125
Category
Article
ISSN
0921-5107

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