SiGe HBT Technology Based on a 0.13- $\mu{\rm m}$ Process Featuring an ${f}_{\rm MAX}$ of 325 GHz

✍ Scribed by Hashimoto, Takashi; Tokunaga, Kazuaki; Fukumoto, Keiko; Yoshida, Yoshinori; Satoh, Hidenori; Kubo, Maki; Shima, Akio; Oda, Katsuya

• Book ID: 125476490
• Publisher: Institute of Electrical and Electronics Engineers
• Year: 2014
• Tongue: English
• Weight: 974 KB
• Volume: 2
• Category: Article
• ISSN: 2168-6734
• DOI: 10.1109/jeds.2014.2315854