Sidewall protection by nitrogen and oxygen in poly-Si1−xGex anisotropic etching using Cl2/N2/O2 plasma
✍ Scribed by Hang-Sup Cho; Shinobu Takehiro; Masao Sakuraba; Junichi Murota
- Book ID
- 104064194
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 300 KB
- Volume
- 8
- Category
- Article
- ISSN
- 1369-8001
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✦ Synopsis
Sidewall protection by nitrogen and oxygen in poly-Si 1Àx Ge x anisotropic etching has been investigated using electron-cyclotron resonance (ECR) chlorine plasma. It was found that the sidewall protection with only N 2 addition is weaker than that of poly-Si. Highly anisotropic etching of poly-Si 0.5 Ge 0.5 is achieved by the addition of both N 2 and O 2 . In the investigation of X-ray photoelectron spectroscopy (XPS) for poly-Si 0.5 Ge 0.5 after the radical dominant etching, it was found that the sidewall protective layer is scarcely formed on Ge surface by not only N 2 addition but also by O 2 addition. From these results, it is suggested that highly anisotropic etching of poly Si 0.5 Ge 0.5 is achieved by the etching protection of both N and O on the sidewall against chlorine radical etching.