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SiC amorphlzation as a result of Ga+ implantation

✍ Scribed by A.F. Tulinov; N.G. Chechenin; K.K. Bourdelle; V.N. Makarov; A.V. Suvorov

Book ID: 113279443
Publisher: Elsevier Science
Year: 1988
Tongue: English
Weight: 367 KB
Volume: 33
Category: Article
ISSN: 0168-583X
DOI: 10.1016/0168-583x(88)90683-0

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## Structural Imperfections of Crystals as a Result of Ion Implantation The diffraction of X-rays has been studied in two-crystal interferometers, the crystals of which had equal interplanar distances and between the blocks of which a non-diffracting zone was formed as a result of ion implantation