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Si(100)4 × 3-In surface phase: identification of silicon substrate atom reconstruction

✍ Scribed by A.V. Zotov; A.A. Saranin; K.V. Ignatovich; V.G. Lifshits; M. Katayama; K. Oura

Book ID
117217832
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
388 KB
Volume
391
Category
Article
ISSN
0039-6028

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## Abstract We present a comparative study of C‐terminated and Si‐rich 3C–SiC(100) surfaces exposed to a H~2~/CH~4~ microwave plasma used in diamond growth. Each surface is characterized before and after short plasma exposures using LEED, XPS and STM techniques. In both cases, a 5 minutes plasma ex