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Si and Ge nanostructures epitaxy on a crystalline insulating LaAlO3(001) substrate

✍ Scribed by Bischoff, Jean-Luc ;Mortada, Hussein ;Dentel, Didier ;Derivaz, Mickael ;Ben Azzouz, Chiraz ;Akremi, Abdelwahab ;Chefi, Chaabanne ;Miguel Morales, Francisco ;Herrera, Miriam ;Manuel Mánuel, José ;Garcia, Rafael ;Diani, Mustapha

Book ID
112180902
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
523 KB
Volume
209
Category
Article
ISSN
0031-8965

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📜 SIMILAR VOLUMES

Epitaxy of Si nanocrystals by molecular
Epitaxy of Si nanocrystals by molecular beam epitaxy on a crystalline insulator LaAlO3(0 0 1)
✍ Hussein Mortada; Didier Dentel; Mickael Derivaz; Jean-Luc Bischoff; Emmanuel Den 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 738 KB

We have studied the Si initial growth mechanisms on LaAlO 3 (0 0 1), a crystalline oxide with a high dielectric constant (high-k material). The clean LaAlO 3 (0 0 1) substrate exhibits a c(2 Â 2) reconstruction that can be attributed to surface O vacancies. Si deposit by molecular beam epitaxy was