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Si adatom surface migration biasing by elastic strain gradients during capping of Ge or Si[sub 1−x]Ge[sub x] hut islands

✍ Scribed by Kubler, L.; Dentel, D.; Bischoff, J. L.; Ghica, C.; Ulhaq-Bouillet, C.; Werckmann, J.


Book ID
121766231
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
674 KB
Volume
73
Category
Article
ISSN
0003-6951

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