✦ LIBER ✦

Shunt screening, size effects and I /V analysis in thin-film photovoltaics

✍ Scribed by Karpov, V. G.; Rich, G.; Subashiev, A. V.; Dorer, G.

Book ID: 118155736
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 606 KB
Volume: 89
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1359158

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electromigration, Stresses, and Pulse Ef

Electromigration, Stresses, and Pulse Effects in Thin-Film Conductors Model

✍ Koleshko, V. M. ;Kiryushin, I. V. 📂 Article 📅 1990 🏛 John Wiley and Sons 🌐 English ⚖ 556 KB

Investigation of high-voltage photovolta

Investigation of high-voltage photovoltaic and piezoelectric effects in thin CdTe films and their dependence on film structure: V B Tolutis and V V Yasutis, Liet Fiz Rinkinys, 10 (2), 1970, 271–277 (in Russian)

📂 Article 📅 1971 🏛 Elsevier Science 🌐 English ⚖ 151 KB

Finite size effects in phase transformat

Finite size effects in phase transformation kinetics in thin films and surface layers

✍ Vladimir I. Trofimov; Ilya V. Trofimov; Jong-Il Kim 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 281 KB

Anomalously large photovoltaic effect in

Anomalously large photovoltaic effect in GaAs films: E.I. Adirovitch, V.M. Rubinov and Yu.M. Yuabov (Vol. 6, No. 10, pp. 3180–3181)

📂 Article 📅 1964 🏛 Elsevier Science 🌐 English ⚖ 223 KB

262. Effect of gamma rays on metallic th

262. Effect of gamma rays on metallic thin films: V D Korshunov and V I Tarakanov, Izv VUZ Fiz, 11, 1972, 143–145 (in Russian)

📂 Article 📅 1974 🏛 Elsevier Science 🌐 English ⚖ 141 KB

Experimental determination of electron e

Experimental determination of electron effective attenuation lengths in silicon dioxide thin films using synchrotron radiation I. Data analysis and comparisons

✍ Suzuki, M.; Ando, H.; Higashi, Y.; Takenaka, H.; Shimada, H.; Matsubayashi, N.; 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 266 KB 👁 2 views

We have measured effective attenuation lengths (EALs) of 140-1100 eV electrons in ultrathin silicon dioxide layers using synchrotron radiation. These EALs were generally smaller than those reported previously, although there was agreement with the values measured by Hochella and Carim (Surf. Sci. Le