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Shifting of the peak generation rate in double-drift silicon IMPATT diodes

✍ Scribed by Chang, L.; Su, S.


Book ID
114592353
Publisher
IEEE
Year
1977
Tongue
English
Weight
192 KB
Volume
24
Category
Article
ISSN
0018-9383

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## Abstract RF properties and avalanche noise generation in opto‐sensitive GaAs, InP, GaInAs, and GaInAsP double‐drift IMPATT diodes with and without optical injection have been studied. The optimum frequency and RF characteristics undergo sufficient variation with increase of intensity of optical