Shallow acceptor impurities in diamond-like semiconductors studied by polarized negative muons

Behavior of shallow acceptor impurities

Behavior of shallow acceptor impurities in uniaxially stressed silicon and in synthetic diamond studied by

✍ T.N. Mamedov; D. Andreika; A.S. Baturin; D. Herlach; V.N. Gorelkin; K.I. Gritsaj 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 299 KB

The results of investigating the behavior of the boron impurity in synthetic diamond and the effect of uniaxial static pressure on the aluminum acceptor in silicon are presented. The data on the hyperfine interaction and on the relaxation of the magnetic moment of Al acceptor in silicon were obtaine