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Sensitization of dielectric surfaces by chemical grafting: application to pH ISFETs and REFETs

✍ Scribed by J.M. Chovelon; J.J. Fombon; P. Clechet; N. Jaffrezic-Renault; C. Martelet; A. Nyamsi; Y. Cros

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 460 KB
Volume: 8
Category: Article
ISSN: 0925-4005
DOI: 10.1016/0925-4005(92)85021-n

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✦ Synopsis

The aim of this work is to prepare a pH sensing device working in a differential arrangement between an ISFET and a REFET. Two types of insulator surfaces have been tested: the pH sensitivity of silica is 36 mV pH_' and that of the PECVD silicon oxynitride is nernstian. The grafting of these surfaces with long-alkyl-chain silanes has taken place. The surface preparation must be well controlled in order to obtain dense, grafted, long-alkyl-chain monolayers on both insulators. The pH sensitivity of grafted silica depends on the chain length; it is 10 mV pH_' for C22 grafted silica. For a silicon oxynitride with a surface density of =SiNH/NH, groups of 2.6 nm-', the pH sensitivity of the Cl8 grafted surface is 15 mV pH_'. PECVD silicon oxynitride seems to be well adapted as a new insulator for pH ISFETs.

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