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Sensitivity enhancement of a flexible MEMS strain sensor by a field effect transistor in an all organic approach

✍ Scribed by Thuau, D.; Abbas, M.; Chambon, S.; Tardy, P.; Wantz, G.; Poulin, P.; Hirsch, L.; Dufour, I.; Ayela, C.


Book ID
127011814
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
778 KB
Volume
15
Category
Article
ISSN
1566-1199

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An ion-sensitive organic field-effect transistor (ISOFET) has been fabricated by using poly(3-hexylthiophene) as the semiconductor and polymethylmethacrylate as the gate insulator. With the gate metallization replaced by an Ag/AgCl reference electrode, and following suitable encapsulation, the ISOFE