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Semiconductor Surface Physics

✍ Scribed by R. H. Kingston (editor)


Publisher
University of Pennsylvania Press
Year
2016
Tongue
English
Leaves
436
Edition
Reprint 2016
Category
Library

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✦ Synopsis


Proceedings of the Conference on the Physics of Semiconductor Surfaces, June 1956.

✦ Table of Contents


Foreword
Introduction
Contents
I Clean Surfaces
Low-Energy Electron Diffraction Studies Of Cleaned And Gas-Covered Germanium (100) Surfaces
Electrical Properties of a Clean Germanium Surface
II Real Surfaces
Mobility in Inversion Layers: Theory and Experiment
Field Effect on Surface Conductance and Surface Recombination
Surface Recombination Processes in Germanium and their Investigation by Means of Transverse Electric Fields
Short Contribution: Storage of Injected Carriers at Surfaces of Germanium
Field Effect and Photo Effect Experiments on Germanium Surfaces
1. Equilibrium Conditions within the Semiconductor
2. Non-Equilibrium Conditions Within The Semiconductor
Measurements of Inversion Layers on Silicon and Germanium and their Interpretation
Slow Relaxation Phenomena on the Germanium Surface
Effects of Thick Oxides on Germanium Surface Properties
Surface Studies on Photoconductive Lead Sulfide Films
Surface Studies on Cleaved Crystals of Lead Sulfide
III Adsorption and Catalysis
Introductory Remarks: Bridges of Physics and Chemistry across the Semiconductor Surface
Gas Reactions on Semiconducting Surfaces and Space Charge Boundary Layers
Experiments Connecting Semiconductor Properties and Catalysis
Long Time Work Function Changes Induced by Light and Electrostatic Fields
IV Oxidation
The Oxidation of Metals
The Interaction of Oxygen with Clean Germanium Surfaces
1. Experiment
2. Theoretical Discussion
The High Temperature Oxidation of Germanium
Short Contribution: Vacuum Microbalance Studies on Single Crystal Germanium
Subject Index
Author Index


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