Semiconductor-On-Insulator Materials for Nanoelectronics Applications

✍ Scribed by H. Gamble, B. M. Armstrong, P. T. Baine, Y. H. Low, P. V. Rainey, S. J. N. Mitchell (auth.), Alexei Nazarov, J.-P. Colinge, Francis Balestra, Jean-Pierre Raskin, Francisco Gamiz, V.S. Lysenko (eds.)

• Publisher: Springer-Verlag Berlin Heidelberg
• Year: 2011
• Tongue: English
• Leaves: 458
• Series: Engineering Materials
• Edition: 1
• Category: Library

✦ Synopsis

"Semiconductor-On-Insulator Materials for NanoElectonics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.

✦ Table of Contents

Front Matter....Pages i-ix
Front Matter....Pages 1-1
Germanium Processing....Pages 3-29
Low-Temperature Fabrication of Germanium-on-Insulator Using Remote Plasma Activation Bonding and Hydrogen Exfoliation....Pages 31-46
Engineering Pseudosubstrates with Porous Silicon Technology....Pages 47-65
Confined and Guided Vapor–Liquid–Solid Catalytic Growth of Silicon Nanoribbons: From Nanowires to Structured Silicon-on-Insulator Layers....Pages 67-89
SOI CMOS: A Mature and Still Improving Technology for RF Applications....Pages 91-119
Front Matter....Pages 121-121
Silicon-based Devices and Materials for Nanoscale FETs....Pages 123-139
FinFETs and Their Futures....Pages 141-153
Ultrathin Body Silicon on Insulator Transistors for 22 nm Node and Beyond....Pages 155-168
Ultrathin n-Channel and p-Channel SOI MOSFETs....Pages 169-185
Junctionless Transistors: Physics and Properties....Pages 187-200
Gate Modulated Resonant Tunneling Transistor (RT-FET): Performance Investigation of a Steep Slope, High On-Current Device Through 3D Non-Equilibrium Green Function Simulations....Pages 201-214
Ohmic and Schottky Contact CNTFET: Transport Properties and Device Performance Using Semi-classical and Quantum Particle Simulation....Pages 215-235
Quantum Simulation of Silicon-Nanowire FETs....Pages 237-249
Single Dopant and Single Electron Effects in CMOS Devices....Pages 251-263
Front Matter....Pages 265-265
SOI MOSFET Transconductance Behavior from Micro to Nano Era....Pages 267-286
Investigation of Tri-Gate FinFETs by Noise Methods....Pages 287-306
Mobility Characterization in Advanced FD-SOI CMOS Devices....Pages 307-322
Special Features of the Back-Gate Effects in Ultra-Thin Body SOI MOSFETs....Pages 323-339
Front Matter....Pages 341-341
SOI Nanowire Transistors for Femtomole Electronic Detectors of Single Particles and Molecules in Bioliquids and Gases....Pages 343-353
Sensing and MEMS Devices in Thin-Film SOI MOS Technology....Pages 355-392
Front Matter....Pages 341-341
Floating-Body SOI Memory: The Scaling Tournament....Pages 393-421
Front Matter....Pages 423-423
A Selection of SOI Puzzles and Tentative Answers....Pages 425-441
Back Matter....Pages 443-447

✦ Subjects

Nanotechnology and Microengineering;Nanotechnology;Semiconductors;Characterization and Evaluation of Materials