Semiconductor nanowires. II, Properties and applications

✍ Scribed by Dayeh, Shadi A.; Fontcuberta i Morral, Anna; Jagadish, Chennupati

• Publisher: Academic Press
• Year: 2016
• Tongue: English
• Leaves: 410
• Series: Semiconductors and Semimetals Volume 94
• Edition: First edition
• Category: Library

✦ Synopsis

Semiconductor Nanowires: Part B, and Volume 94 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires.

• Includes experts contributors who review the most important recent literature
• Contains a broad view, including examination of semiconductor nanowires

✦ Table of Contents

Content: Front Cover
Semiconductor Nanowires II: Properties and Applications
Copyright
Contents
Contributors
Preface
Chapter One: Semiconductor Nanowire Optoelectronic Devices
1. Introduction
2. Waveguiding Properties of Semiconductor Nanowires
2.1. Solutions to Maxwellś Equations: Guided and Leaky Modes
3. Tailored Emission and Out-Coupling of Light from Nanowires
4. Nanowire Solar Cells
5. Nanowire Lasers
6. Concluding Remarks
Acknowledgments
References
Chapter Two: Optical Properties of Semiconductor Nanowires: Insights into Band Structure and Carrier Dynamics
1. Introduction 2. Experimental Spectroscopies2.1. Single Nanowire Imaging at low Temperatures
2.2. CW Spectroscopies
2.2.1. Micro-Raman Spectroscopy
2.2.2. Microphotoluminescence Spectroscopy
2.2.3. Photoluminescence Excitation Spectroscopy
2.2.4. Photocurrent Spectroscopy
2.3. Time-Resolved Spectroscopies
2.3.1. Time-Resolved Photoluminescence
2.3.2. Transient Rayleigh Scattering
2.4. Summary
3. Semiconductor Growth: Optimization
3.1. Increasing the Quantum Efficiency
3.2. Reduction of Carbon Incorporation
4. Strain and Core-Shell Nanowires
4.1. Core-Shell GaAs/Gap nanowires 4.2. Axial GaAs-GaP Nanowires5. Symmetries and Band Structure in wurtzite Nanowires
5.1. Introduction
5.2. Wurtzite InP Nanowires
5.2.1. Band Structure
5.2.2. Symmetries
5.2.3. ZB/WZ InP Axial Heterostructures
5.3. Wurtzite GaAs Nanowires
5.3.1. Band Structure
5.4. Summary
6. Quantum Nanowire Heterostructures
6.1. Introduction
6.2. QWT Energy Structure
6.3. Quantum Dots in QWT
6.4. Summary and Future Directions
7. Photoexcited Carrier Dynamics
7.1. Many Body Effects in Nanowires
7.2. Decay and Thermalization of Hot Carriers in Nanowires 7.3. Hot Carrier and Hot Phonons in GaAs and InP NWs8. Conclusions and Future Prospects
Acknowledgments
References
Chapter Three: Compound Semiconductor Nanowire Photodetectors
1. Introduction
2. Nanowire Photoconductors
2.1. General Description of Nanowire Photoconductivity
2.2. Light Absorption
2.2.1. Optical Birefringence and Light Polarization Effects
2.2.2. Light Scattering and Absorption Enhancement in Vertical NW Arrays
2.3. Nanowire Photoconductor Materials
2.3.1. Group III-V Compounds
2.3.2. Nitride Nanowire Photoconductors
2.3.3. Group II-VI
3. Phototransistors 4. Nanowire Heterostructures4.1. Homogeneous and Heterogeneous Photodiode Junctions
4.2. Schottky Junctions
4.3. Avalanche Photodiodes
5. Summary and Conclusions
Acknowledgments
References
Chapter Four: Mechanical Behaviors of Semiconductor Nanowires
1. Introduction
2. Experimental Techniques by In Situ Microscopy
2.1. Bending
2.2. Resonance
2.3. Uniaxial Loading
2.4. Nanoindentation
3. Mechanical Behaviors of NWs
3.1. Youngś Modulus
3.2. Elastic Strain
3.3. Anelasticity
3.4. Plastic Strain
3.5. Fracture Strength
3.6. Fatigue
3.7. Self-Healing
4. Summary
References