## Abstract In this paper, we briefly describe the development of an advanced model of semiconductor lasers. Wigner functions and quantum Boltzmann equations were used to formulate the model. Our aim is to improve upon the presently used driftβdiffusionβbased models. Basic laser characteristics, su
Semiconductor laser model based on moment method solutions of the Boltzmann transport equation
β Scribed by Kurakake, H.
- Book ID
- 117869315
- Publisher
- IEEE
- Year
- 1999
- Tongue
- English
- Weight
- 160 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0018-9197
- DOI
- 10.1109/3.784595
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract The Boltzmann equation is solved for homogeneous electric and magnetic fields (__E__ and __H__) and a temperature gradient β__T__/β__r__. The solution is presented as an ascending power series in __E__, __H__, and β__T__/β__r__. In contrast to common procedure this treatment is not rest
A model for the simulation of the electron energy distribution in nanoscale metal-oxide-semiconductor field-effect transistor (MOSFET) devices, using a kinetic simulation technique, is implemented. The convective scheme (CS), a method of characteristics, is an accurate method of solving the Boltzman