Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

Publisher: IEC
Year: 2022
Tongue: English
Leaves: 29
Edition: 1.0
Category: Scientific

⬇ Acquire This Volume

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Semiconductor devices - Mobile ion tests

📁 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

📂 Scientific

Semiconductor devices - Discrete devices

📁 Semiconductor devices - Discrete devices - Part 7-5: Bipolar transistors for power switching applications

📂 Scientific

Semiconductor devices; discrete devices;

📁 Semiconductor devices; discrete devices; part 7: bipolar transistors; section 3: blank detail specification for bipolar transistors for switching appliances

📂 Scientific

Discrete semiconductor devices. Metal-ox

📁 Discrete semiconductor devices. Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications

📂 Scientific

Semiconductor devices - Hot carrier test

📁 Semiconductor devices - Hot carrier test on MOS transistors

📂 Scientific

Gallium nitride power devices

📁 Gallium nitride power devices

✍ Hongyu Yu, Tianli Duan 📂 Library 📅 2017 🏛 Pan Stanford Publishing 🌐 English

<P>GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be deve