Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers

Leaves: 36
Edition: 1.0
Category: Scientific

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Semiconductor devices - Time dependent d

📁 Semiconductor devices - Time dependent dielectric breakdown (TDDB) test for gate dielectric films

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📁 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

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📁 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers

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Breakdown Phenomena in Semiconductors an

📁 Breakdown Phenomena in Semiconductors and Semiconductor Devices

✍ Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein 📂 Library 📅 2005 🏛 World Scientific 🌐 English

Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to pr