Semiconducting properties of anodically formed layer on antimony

✍ Scribed by M. Metikoš-Huković; B. Lovreček

• Book ID: 103061754
• Publisher: Elsevier Science
• Year: 1978
• Tongue: English
• Weight: 508 KB
• Volume: 23
• Category: Article
• ISSN: 0013-4686
• DOI: 10.1016/0013-4686(78)80019-x

✦ Synopsis

Results of photopolarization, photoconductivity and double layer capacity measurements for the system Sb/oxide layer/eleclrolyte have been given. On the basis of the above measurements it has been concluded that anodic layers on antimony as examined are semiconductors ofn-type, bandgap En = 3 eV and donor density N, z 1O1' cm-3. The dependence of photovoltage on barrier layer thickness of the Schottky type cdculated on the basis of experimental results, also supports the above conclusion. that is, the rrdnimum thickness in which a significant photo-effect still appears is of the order of magnitude 10-s cm, which seems plausible with respect to the expected of light absorption coefficient.