✦ LIBER ✦
Semi-analytical calculation of the current–voltage characteristics in any layered semiconductor heterostructure under electric and magnetic fields
✍ Scribed by A. Hernández-Cabrera; A. Ramos
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 142 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
Analytical solution of the Schrödinger equation of a carrier in a layered heterostructure under a magnetic field B parallel to the interfaces and an electric field in the growth direction has been used to analyse the magnetotunneling through the structure. Elastic and inelastic scattering are included to calculate the current-voltage characteristics. The proposed method can be carried out without any special computational effort, and results can be directly compared with experimental data.