𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Self organization in InGaAs/AlGaAs quantum disk structures on GaAs (311)B substrates

✍ Scribed by T. Ogawa; M. Akabori; J. Motohisa; T. Fukui

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
250 KB
Volume
47
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Optical properties of vertically aligned
Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates
✍ P.P. GonzΓ‘lez-Borrero; D.I. Lubyshev; E. Marega Jr; E. Petitprez; P. Basmaji πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 76 KB

In this work, we present substrate orientation effects on optical properties in vertically stacked In 0.5 Ga 0.5 As layers grown by molecular beam epitaxy on (311)A/B and reference (100) GaAs substrates. Samples were grown for different GaAs spacer thicknesses. The spacer thickness variation shows t

Enhancement of the 2DEG density in AlGaA
Enhancement of the 2DEG density in AlGaAs/InGaAs/GaAs P-HEMTs structures grown by MBE on (311)A and (111)A GaAs substrates
✍ S. Rekaya; L. Sfaxi; L. BouzaΓ―ene; H. Maaref; C. Bru-Chevallier πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 439 KB

The pseudomorphic high electron mobility transistor (P-HEMT) structure materials Al 0.33 Ga 0.7 As/In 0.1 Ga 0.9 As/GaAs have been grown by molecular beam epitaxy (MBE) on (311)A and (111)A GaAs substrates. The epitaxy of strain heterostructure on high index GaAs substrate has led to new growth phen

Effect of alloy disorder and structural
Effect of alloy disorder and structural defects on excitonic properties in (100)- and (311)-Oriented InGaAs/GaAs quantum wells
✍ F.E.G. GuimarΓ£es; D. Lubyshev; V.A. Chitta; P. Basmaji πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 211 KB

The properties of excitonic states in pseudomorphic, (100)- and (311)-oriented \(\mathrm{In}_{0.2} \mathrm{Gr}_{0}{ }_{8} \mathrm{As} / \mathrm{GaAs}\) quantum well (QW) structures are investigated. Strained QW's with different states of strain and segregation were grown by molecular beam epitaxy. N