Self-heating-dependent thermal-noise model using a distributed-gate structure for RF applications
✍ Scribed by Nirupama Kapoor; Subhasis Haldar; Mridula Gupta; R. S. Gupta
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 124 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
In this paper, we present the gate‐resistance dependence on thermal noise of a fully depleted SOI MOS operating in an inversion regime with the gate structure's distributed nature. The various parameters used in this analysis are derived from the characteristics obtained by incorporating various short‐channel effects, such as channel length modulation, velocity saturation, and lattice temperature‐dependent mobility. The spectral density of the drain‐current noise is obtained and although it is observed that the noise in the frequency region >1 GHz is dominated by channel thermal noise, but the noise due to gate resistance is very large, in the frequency region <1 GHz. Therefore, the gate‐resistance dependence on thermal noise plays a major role when the device is operating in the RF range and must be incorporated. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 40: 87–92, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11293