Self-Consistent SchrÖdinger–Poisson Simulations on Capacitance–Voltage Characteristics of Silicon Nanowire Gate-All-Around MOS Devices With Experimental Comparisons

✍ Scribed by Chin, S.K.; Ligatchev, V.; Rustagi, S.C.; Hui Zhao; Samudra, G.S.; Singh, N.; Lo, G.Q.; Dim-Lee Kwong

• Book ID: 114619748
• Publisher: IEEE
• Year: 2009
• Tongue: English
• Weight: 678 KB
• Volume: 56
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2009.2028402