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Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

✍ Scribed by Jagannathan, B.; Khater, M.; Pagette, F.; Rieh, J.-S.; Angell, D.; Chen, H.; Florkey, J.; Golan, F.; Greenberg, D.R.; Groves, R.; Jeng, S.J.; Johnson, J.; Mengistu, E.; Schonenberg, K.T.; Schnabel, C.M.; Smith, P.; Stricker, A.; Ahlgren, D.; Freeman, G.; Stein, K.; Subbanna, S.

Book ID: 120645259
Publisher: IEEE
Year: 2002
Tongue: English
Weight: 233 KB
Volume: 23
Category: Article
ISSN: 0741-3106
DOI: 10.1109/55.998869

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