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Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors

✍ Scribed by Masashi Akabori; Tatsuya Murakami; Syoji Yamada


Book ID
116630237
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
852 KB
Volume
345
Category
Article
ISSN
0022-0248

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