Selective area epitaxy of GaAs and InGaAs by ultra-high vacuum chemical vapor deposition using triethylgallium, trimethylindium, arsine, and monoethylarsine

✍ Scribed by Sung-Bock Kim; Jeong-Rae Ro; Seong-Ju Park; El-Hang Lee

• Book ID: 108342211
• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 535 KB
• Volume: 169
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/s0022-0248(96)00413-7