Selected area heteroepitaxial growth of GaAs on silicon for advanced device structures

✍ Scribed by R.J Matyi; H Shichijo

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 930 KB
• Volume: 181
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(89)90488-4