✦ LIBER ✦

Segregation of Oxygen at Metal/Oxide-Interfaces

✍ Scribed by Jürgen Gegner; Gerhard Hörz; Reiner Kirchheim

Book ID: 110264076
Publisher: Springer
Year: 1997
Tongue: English
Weight: 175 KB
Volume: 5
Category: Article
ISSN: 0927-7056
DOI: 10.1023/a:1008611820425

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Enhancement of ferroelectricity at metal

Enhancement of ferroelectricity at metal–oxide interfaces

✍ Stengel, Massimiliano; Vanderbilt, David; Spaldin, Nicola A. 📂 Article 📅 2009 🏛 Nature Publishing Group 🌐 English ⚖ 463 KB

Oxygen Storage at the Metal/Oxide Interf

Oxygen Storage at the Metal/Oxide Interface of Catalyst Nanoparticles

✍ Tobias Schalow; Mathias Laurin; Björn Brandt; Swetlana Schauermann; Sebastien Gu 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 433 KB 👁 1 views

Adsorption and desorption of oxygen at m

Adsorption and desorption of oxygen at metal-oxide interfaces: Two-dimensional modeling approaches

✍ A. Öchsner; J. Grácio; M. Stasiek 📂 Article 📅 2006 🏛 ASM International 🌐 English ⚖ 459 KB

Cascade-driven mixing at metal oxide int

Cascade-driven mixing at metal oxide interfaces

✍ S.M. Valone; B.P. Uberuaga; X.-Y. Liu; B. Jeon; A. Chaudhry; N. Grønbech-Jensen 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 395 KB

Surface and interface segregation in the

Surface and interface segregation in the oxidation of metals

✍ H. J. Grabke 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 445 KB 👁 2 views

Band alignment at metal-semiconductor an

Band alignment at metal-semiconductor and metal-oxide interfaces

✍ Robertson, John 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 565 KB

## Abstract The mechanisms of Schottky barrier formation are reviewed from the metal‐induced gap state model to the universal defect model, and the chemical reaction model. The recent progress in understanding barrier heights and band offsets in Si – high dielectric constant oxide and metal high di